LPI provides the only commercially available conductive, reflective, and lattice matched templates for subsequent epitaxial growth of Gallium Nitride based LEDs and Lasers. This product allows our customers to achieve sub-micron optical cavity thicknesses, improved device performance and reduced manufacturing costs.

LPI offers unique Magnetron Sputtered Epitaxy (MSE) on 2" wafers.
LPI-Grown Material Substrate Options
Sapphire MOCVD GaN on Sapphire AlN on Sapphire
GaN on AlN


n-type Ge-doped GaN

n-type Hf-doped GaN

GEMM (GaN on AlN on HfN)