New Era of Affordable MicroLEDs
MicroCavity MicroLEDs enable light beam shaping and efficient electrical to light conversion. The low temperature epitaxy growth made possible by Lightwave Photonics, Inc. technology further enables integration with CMOS technologies.
MicroCavity refers to an optical cavity where the length is below a micron. Within this optical regime, the behavior of emitted light is different compared to ray-tracing models due to wave resonance.
One of the benefits to MicroCavities is intrinsic beam shaping properties. This helpful to meeting the efficacy needs for displays and augmented reality.
Electrical to Photonic Conversion
Another benefit of MicroCavities is the external quantum efficiency. Electrical energy is more efficiency converted into light output.
Low Temperature Growth
Low temperature epitaxial growth of III-nitride materials is key to integration of light emitting devices with temperature sensitive CMOS arcitechures.
Looking ahead to future applications, the second most used semiconductor material system (III-Nitrides) will need to be integrated with Silicon CMOS. While launching our MicroLED solution, demand for integration is clear.
Conductive, Lattice Matched, & Reflective
LPI makes mirrors with cermet and intentionally n-type doped GaN where both materials are electrically conductive. The mirror material needs to be lattice matched to Indium Gallium Nitride such that the subsequent materials grown upon the mirror are of high quality with a low number of defects. Not all reflective materials are the same. The reflective properties of cermet materials enable the mirror to be placed closer to the active region of the MicroLED. This is important for the overall performance of the MicroLED.
indium gallium nitride (InGaN)
Mirrored Templates on Sapphire, Silicon, SiC, GaN…
LED Epiwafers on Mirrored Templates
Low Temperature III-N Epitaxy films (doped, undoped)
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